Enlightening and flexing memories
European Team of researchers developed a light-responsive organic thin-film transistor
Researchers from Humboldt-Universität zu Berlin, led by Professor Stefan Hecht, who is a member of IRIS Adlershof, in collaboration with the University of Strasbourg & CNRS (France) and the University of Nova Gorica (Slovenia), have shown that a carefully chosen blend of a small photoswitchable molecule and a semiconducting polymer can be used to fabricate high-performance memory devices that can be written and erased by light. Such multilevel (8-bit) optical memories have also been implemented on flexible substrates, paving the way to applications in wearable electronics, E-papers, and smart devices. These results have been published in Nature Nanotechnology.
Prof. Stefan Hecht
Humboldt-Universität zu Berlin
Department of Chemistry & IRIS Adlershof
phone: 030 2093-7365